GODAR LL4448 Datasheet
Features
Silicon Epitaxial Planar Diode
fast switching diode in MiniMELF case especially suited for
automatic insertion.
Identical electrically to standard 1N4448
These diode are delivered taped.
Details see Taping.
Weight approx. : 0.05g
LL4448
SILICON EPITAXIAL PLANAR DIODE
DIMENSIONS
DIM
A 0.134 0.142 3.4 3.6
B 0.055 0.059 1.40 1.50
C 0.008 0.016 0.2 0.4
inches mm
Min. Max. Min. Max.
Note
Absolute Maximum Ratings (T
Reverse voltage V
Peak reverse voltage V
Rectified current (Average)
Half wave rectification with Resist. Load
=25 and f 50Hz
at T
amb
Surge forward current at t<1s and Tj=25 I
Power dissipation at T
Junction Temperature T
Storage temperature range T
Note:
(1) Valid provided that electrodes are kept at ambient temperature
=25 P
amb
=25 )
a
Symbols Values Units
R
RM
I
O
FSM
tot
j
S
75 Volts
100 Volts
1)
150
500 mA
1)
500
175
-65 to +175
mA
mW
1
Characteristics
Forward voltage
=5mA
at I
F
=100mA
at I
F
Leakage current
=20V
at V
R
=75V
at V
R
=20V, Tj=150
at V
R
Reverse breakdown voltage
tested with 100uA pulses
Capacitance
=0
at V
F=VR
Reverse recovery time
=10mA to IR=1mA, VR=6V, RL=100
from I
F
Thermal resistance
junction to ambient Air
Rectification efficiency
at f=100MHz, V
Note:
(1) Valid provided that electrodes are kept at ambient temperature
=2V
RF
at
Tj=25
Symbols Min. Typ. Max. Units
V
F
V
F
I
R
I
R
I
R
V
(BR)R
C
tot
t
rr
R
thA
V
0.62
-
-
-
-
-
-
-
-
-
0.72
25
50
1
5
Volt
Volt
nA
uA
uA
100 - - Volts
--4
--4nS
--0.35 1)K/mW
0.45 - - -
F
Rectification efficiency measurement circuit
2
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