GMT G5316RZ1D, G5316RZ1U Schematic [ru]
Global Mixed-mode Technology
G5316
Complete DDR2, DDR3 and DDR3L Memory
Solution Synchronous Buck PWM Controller,
2A LDO, Buffered Reference
Features
•Synchronous Buck Controller (VDDQ)
Ultra-High Efficiency at Light and Heavy Load
with Auto-skip Function
No Current-Sense Resistor (Lossless ILIMIT)
Quasi-PWM with 100ns Load-Step Response
0.7V to 1.8V Adjustable Output Range
3V to 28V Battery Input Range
0.8% Vref Accuracy
Supports Soft-off in S4/S5 States
Selectable 300k/400kHz Switching Frequency
OVP & UVP of VDDQ Output
Drives Large Synchronous-Rectifier FETs
Power-Good Indicator
•2-A LDO (VTT), Buffered Reference (VTTREF)
VLDOIN Voltage Range: 1.2 V to 3.6 V
Requires Only 10µF Ceramic VTT Output Ca-
pacitance
Supports High-Z in S3 and Soft-Off in S4/S5
Integrated Divider Tracks 1/2 VDDQSNS for
Both VTT and VTTREF
Remote Sensing (VTTSNS)
±20mV VTT and 0.8% VTTREF Accuracy
10mA Buffered Reference (VTTREF)
Built-In Soft-Start to Reduce the VLDOIN Surg-
ing Current
Over Current Protection of VTT Output
Thermal Shutdown Protection
Applications
Notebook Computers
CPU Core Supply
Chipset/RAM Supply as Low as 0.7V
General Description
The G5316 is intended for DDR2, DDR3 and DDR3L
memory systems. It integrates a synchronous buck
PWM controller with a 2-A sink-source linear regulator
and buffered reference.
The PWM controller uses constant on-time control
scheme to handle wide input/output voltage ratios with
ease and provides 100ns “instant-on” response to
load transients while maintaining a relatively constant
switching frequency. The G5316 achieves high efficiency at a reduced cost by eliminating the current-sense resistor found in traditional current-mode
PWMs. Efficiency is further enhanced by an ability to
drive very large synchronous rectifier MOSFETs. Single-stage buck conversion allows these devices to
directly step down high-voltage batteries for the highest possible efficiency.
The 2A sink/source tracking termination regulator is
specifically designed for low-cost/ low-external component count systems. The regulator contains a high
speed operational amplifier that provides fast load
transient response with only 10µF of ceramic output
capacitance. The G5316 supports remote sensing
functions and all features required to power the DDR2
/DDR3 /DDR3L VTT bus termination according to the
JEDEC specification. In addition, the G5316 includes
integrated sleep-state controls placing VTT in High-Z
in S3 (suspend to RAM) and soft-off for VTT and
VTTREF in S4/S5 (Shutdown).
The G5316 provides OVP, UVP, over current and
thermal shutdown protection functions and is available
in a 20-pin 3X3 TQFN package.
Ordering Information
ORDER
NUMBER
G5316RZ1U 5316 -40°C to +85°C TQFN3X3-20
G5316RZ1D 5316 -40°C to +85°C TQFN3X3-20
Note: RZ: TQFN3X3-20
1: Bonding Code
U & D : Tape & Reel
Ver: 0.9
Jan 18, 2013
MARKING
1
TEMP.
RANGE
PACKAGE
(Green)
TEL: 886-3-5788833
http://www.gmt.com.tw
Global Mixed-mode Technology
Pin Configuration
VTTSNS
VTTSNS
VLDOIN
VLDOIN
VTTGND
VTTGND
VTTREF
VTTREF
VTT
VTT
G5316
TRIP
TRIP
S5
MODE
MODE
19
19
Pad
Pad
18
18
S3
S3
17
17
S5
16
16
15
15
14
14
13
13
12
12
11
11
BST
BST
DH
DH
LX
LX
VCC
VCC
DL
DL
PGOOD
PGOOD
20
20
1
1
2
2
3
3
4
4
5
5
Thermal
Thermal
8
8
7
7
9
6
6
9
10
10
GND
G5316 TQFN3X3-20
Note: Recommend connecting the Thermal Pad to the Ground for excellent power dissipation.
Note: Recommend connecting the Thermal Pad to the Ground for excellent power dissipation.
G5316 TQFN3X3-20
GND
VREF
VREF
PGND
PGND
REFIN
REFIN
VDDQSNS
VDDQSNS
Ver: 0.9
Jan 18, 2013
2
TEL: 886-3-5788833
http://www.gmt.com.tw
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