GME BL2300 Schematic [ru]
Production specification
N-Channel Enhancement Mode Field Effect Transistor
BL2300
FEATURES
z VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
z VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A
z VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A
Pb
Lead-free
APPLICATIONS
z Power Management in Note book.
z Portable Equipment.
z Battery Powered System. SOT-23
z Load Switch.
z DSC.
ORDERING INFORMATION
Type No. Marking Package Code
BL2300 C009T SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
DSS
V
GSS
I
D
IDM Pulsed Drain current 15 A
P
D
R
θJA
TJ,T
stg
Drain-Source voltage 20 V
Gate -Source voltage
Maximum Drain current TA=25℃
Power Dissipation 1.25 W
Thermal resistance,Junction-to-Ambient 100
Operating Junction and StorageTemperature -55 to 150
±10
3.8 A
V
℃/W
℃
C229 www.gmicroelec.com
Rev.A 1
Production specification
V
V
V
N-Channel Enhancement Mode Field Effect Transistor
BL2300
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-body Leakage I
Zero Gate Voltage Drain Current I
Drain-Source on-resistance R
Diode forward voltage V
On-State Drain Current I
(BR)DSSVGS
GS(th)
GSS
DSS
DS(ON)
SD
VDS=5V, VGS=4.5V 18 - - A
D(ON)
=0V,ID=250μA 20 - -
V
VDS=VGS, ID=250μA 0.6 0.78 1.5
VDS=0V, VGS=10V - - 100
nA
VDS=0V, VGS=-10V - - -100
VDS=20V, VGS=0V - - 1 μA
=4.5V,ID=5.0A
GS
=2.5V,ID=4.0A
GS
=1.8V,ID=1.0A
GS
-
-
32
50
62
40
60
75
mΩ
VGS=0V,IS=1.25A - 0.825 1.2 V
Forward Transconductance gF VDS=5V, ,ID=5A 5 - - S
Total Gate Charge Qg - 16.8 -
Gate-Source Charge Qgs - 2.5 -
Gate-Drain Charge Qgd
Gate Resistance R
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
g
ISS
OSS
RSS
D(ON)
R
D(OFF)
R
VDS=10V,VGS=4.5V,ID=3.5A
- 5.4 -
VDS=0V,VGS=0V,f=1MHz - 7.5 - Ω
- 888 -
VDS=15V,VGS=0V,f=1.0MHz
- 144 -
- 115 -
- 31.8 -
VDD =10V,RL = 10Ω,
,I
- 50.3 -
=1A, VGS=4.5V,R
D
GEN
= 6Ω
- 14.5 -
- 31.9 -
nC
pF
ns
C229 www.gmicroelec.com
Rev.A 2
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