GME 2SK3019 Schematic [ru]
B Production specification
Small Signal MOSFET Transistor 2SK3019
FEATURES
z Low on-resistance.
z Low voltge drive(2.5v)makes this device
Ideal for portable equipment.
z Easily designed drive circuits.
z Fast switching speed.
z Easy to parallel.
Pb
Lead-free
APPLICATIONS
z N-channel MOSFET. SOT-523
z Interfacing, switching (30V, 100mA).
ORDERING INFORMATION
Type No. Marking Package Code
2SK3019 KN SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
DSS
V
GSS
I
D
IDR
P
D
T
ch
Tstg Storage Temperature -55 to +150
Drain-Source voltage 30 V
Gate -Source voltage
Drain current -continuous
-Pulsed
Reverse Drain current -continuous
-Pulsed
Power Dissipation 150 mW
Channel temperature 150
±20
100
200
100
200
V
mA
mA
℃
℃
H022 www.gmicroelec.com
Rev.A 1
B Production specification
V
V
Small Signal MOSFET Transistor 2SK3019
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-body Leakage Forward
Reverse
Zero Gate Voltage Drain Current I
Static drain-Source on-sate
resistance
(BR)DSSVGS
GS(th)
I
GSS
DSS
R
DS(ON)
=0V,ID=10μA 30
V
VDS=3V, ID=-100μA 0.8 1.5
VDS=0V, VGS=20V
V
=0V, VGS=-20V
DS
1
-1
μA
VDS=30V, VGS=0V 1.0 μA
=4V,ID=10mA
GS
=2.5V,ID=1mA
GS
5
7
8
13
Ω
Forward transfer admittance |Yfs| ID=10mA,VDS=3V 20 ms
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-On Delay Time t
Rise time t
Turn-Off Delay Time t
Fall time t
ISS
OSS
RSS
D(ON)
r
D(OFF)
f
VDS=5V,VGS=0V,f=1.0MHz
VDD=5V, ID=10mA
R
=500Ω, VGS=5V,
L
80 ns
R
= 10Ω
GS
13
9
pF
4
15 ns
35 ns
80 ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
H022 www.gmicroelec.com
Rev.A 2
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