Production specification
Silicon Epitaxial Planar Transistor 2SC5344
FEATURES
Pb
z High hFE
z Complementary pair with 2SA1981
APPLICATIONS
z General small signal amplifier
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC5344 FAO/FAY SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
35 V
30 V
5 V
800 mA
200 mW
-55 to +150 ℃
C023 www.gmicroelec.com
Rev.A 1
Production specification
Silicon Epitaxial Planar Transistor 2SC5344
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
V
(BR)CBO IC
=100μA,IE=0 35 V
TYP MAX UNIT
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
V
V
I
CBO
I
EBO
h
FE
V
f
T
IC=1mA,IB=0 30 V
(BR)CEO
(BR)EBO IE
=10μA,IC=0 5 V
VCB=35V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=1V,IC=100mA 100 320
CE(sat)
IC=500mA, IB=50mA
VCE=5V, IC= 10mA
0.5 V
120 MHz
Output capacitance
C
ob
VCB=10V, IE=0,f=1MHz
13 pF
CLASSIFICATION OF h
FE
Rank O Y
Range 100-200 160-320
Marking FAO FAY
C023 www.gmicroelec.com
Rev.A 2
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