GME 2SC3052 Schematic [ru]

Production specification

Silicon Epitaxial Planar Transistor 2SC3052

FEATURES

z Low collector to emitter saturation voltage.

Pb

z Excellent linearity of DC forward current

gain.

z Super mini package for easy mounting.

APPLICATIONS

z For hybrid IC,small type machine low frequency voltage SOT-23

amplify application.

ORDERING INFORMATION

Type No. Marking Package Code

2SC3052 LE/LF/LG SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Lead-free

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj,T

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction and Storage Temperature

50 V

50 V

6 V

200 mA

125 mW

-55 to +150 ℃

C159 www.gmicroelec.com
Rev.A 1

Production specification

Silicon Epitaxial Planar Transistor 2SC3052
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter Symbol Test conditions MIN

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector to Emitter saturation voltage

Collector output capacitance

Transition frequency

Noise Figure

V

(BR)CBO IC

V

(BR)CEOIC

V

(BR)EBO IE

I

CBO

I

EBO

h

FE

V

CE(sat)

C

ob

f

T

NF

=100μA,IE=0 50 V

=0.1mA,IB=0 50 V

=100μA,IC=0 6 V

VCB=50V,IE=0 0.1 μA

VEB=6V,IC=0 0.1 μA

VCE=6V,IC=1mA

=6V,IC=0.1mA

V

CE

IC=100mA, IB=10mA

VCB=6V,IE=0,f=1MHz

VCE=6V, IC= 10mA

V

=6V,IE=0.1mA,

CE

f=1kHz,R

=2kΩ

G

150

0.3 V

2.5 pF

200 MHz

20 dB

TYP MAX UNIT

90

800

CLASSIFICATION OF h

FE

Rank E F G

Range 150-300 250-500 400-800

Marking LE LF LG

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C159 www.gmicroelec.com
Rev.A 2