GME 2SC2881 Schematic [ru]
Production specification
NPN Silicon Epitaxial Planar Transistor 2SC2881
FEATURES
Pb
z High voltage:V
z High transition frequency;f
z P
z Complements the 2SA1201.
=500mW.
C
APPLICATIONS
z Power and voltage amplifier application.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
2SC2881 CO1/CY1 SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
CEO
=120V
=120MHz.
T
Lead-free
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base current
Collector Dissipation
Junction and Storage Temperature
120 V
120 V
5 V
0.8 A
0.16 A
500 mW
-55 to +150 ℃
E026 www.gmicroelec.com
Rev.A 1
Production specification
NPN Silicon Epitaxial Planar Transistor 2SC2881
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
f
T
IC=10mA,IB=0 120 V
(BR)CEO
IE=1mA,IC=0 5
(BR)EBO
CE(sat)
BE
=1mA,IE=0 120 V
VCB=120V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=5V,IC=100mA 80 240
IC=500mA, IB=50mA
VCE=5V, IB=500mA
VCE=5V,Ic=100mA
1 V
1 V
120 MHz
TYP MAX UNIT
V
Collector output capacitance
CLASSIFICATION OF h
Rank O Y
Range 80-160 120-240
MARKING CO1 CY1
C
FE
ob
VCB=10V,IE=0,f=1MHz
30 pF
E026 www.gmicroelec.com
Rev.A 2
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