G-LINK GLT7256L08-8TS, GLT7256L08-8J3, GLT7256L08-15TS, GLT7256L08-15J3, GLT7256L08-12TS Datasheet
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G-LINK
∗
Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM
Features : Description :
GLT7256L08
Mar 2000(REV. 2.0)
∗ 32K x 8-bit organization.
∗ Very high speed – 8,10,12,15 ns.
∗ Low standby power.
Maximum 2mA for GLT7256L08.
∗ Fully static operation
∗ 3.3V±5% power supply.
∗ TTL compatible I/O.
∗ Three state output.
∗ Chip enable for simple memory expansion.
Available in 28 PIN 300 mil SOJ and TSOP
packages.
GLT7256L08 are high performance 256K bit static
random access memories organized as 32K by 8 bits
and operate at a single 3.3 volt supply. Fabricated
with G-Link Technology's very advanced CMOS submicron technology, GLT7256L08 offer a combination
of features: very high speed and very low stand-by
current. In addition, this device also supports easy
memory expansion with an active LOW chip enable
(CE) as well as an active LOW output enable (OE)
and three state outputs.
Pin Configurations : Function Block Diagram :
GLT7256L08
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 1 -
G-LINK
CE
OE
WE
WECEOE
0C to + 70
C
Capacitance
(1)
TA=25°°C,f=1.0MHZ :
Pin Descriptions:
Name Function
GLT7256L08
Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM
Mar 2000(REV. 2.0)
A0 - A
14
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
I/OO - I/O
V
CC
7
Data Input and Data Output
+3.3V Power Supply
GND Ground
Truth Table:
Mode
Not Selected
X H X High Z
I/O Operation
(Power Down)
Output Disabled H L H High Z
Read H L L
Write L L X
D
D
OUT
IN
V Current
CC
I ,I
CCSB CCSB1
I
CC
I
CC
I
CC
Absolute Maximum Ratings: Operation Range:
Range Temperature
Commercial
Ambient Temperature
Under Bias...................................-10°C to +80°C
Storage Temperature(plastic)....-55°C to +125°C
Voltage Relative to GND.............-0.5V to + 4.6V
Data Output Current..................................50mA
Power Dissipation......................................1.0W
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATING may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
Sym. Parameter Conditions Max. Unit
C
Input Capacitance
IN
C
I/O
Input/Output
Capacitance
G-Link Technology Corporation,Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 2 -
o o
VIN=0V
V
I/O
=0V
V
CC
3.3V±5%
8
10pFpF
G-LINK
CE
CCDR
(1)
Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM
DC Characteristics
Sym. Parameter Test Conditions Min. Typ
V
V
I
LI
I
LO
V
V
I
CC
I
CCSB
I
CCSB1
Guaranteed Input Low
IL
Voltage
Guaranteed Input High
IH
Voltage
Input Leakage Current VCC=Max., VIN=0V to V
Output Leakage Current
Output Low Voltage VCC=Min.,IOL =8mA - - 0.4 V
OL
Output High Voltage VCC=Min., IOH =-4mA 2.4 - - V
OH
Operating Power Supply
Current
Standby Power Supply
Current
Power Down Power
Supply Current
(2)
(2)
CC
VCC=Max.,CE≥V
VCC=Max., CE≤VIL,
I
=0mA., F=F
I/O
VCC=Max., CE≥VIH,
I
=0mA., F=F
I/O
max
max
IH
(3)
(3)
VCC=Max., CE≥VCC.-0.2V,
VIN≥VCC. -0.2V or
-0.3 - +0.8 V
2.0 - VCC+0.3 V
-5 - 5
-5 - 5
- - -8 -10 -12 -15
- -
- - 2 mA
GLT7256L08
Mar 2000(REV. 2.0)
(1)
Max. Unit
110 100 90 90 mA
15 mA
µA
µA
1. Typical characteristics are at VCC=3.3V, TA=25°C.
2. These are absolute values with repeat to device ground and all overshoots due to system or
tester noise are included.
3. F
MAX
=1/tRC.
Data Retention (L version only)
Sym. Parameter Test Conditions Min. Typ
V
I
t
CDR
t
R
1. CE≥VDR -0.2V, VIN≥VDR -0.2V or VIN≤0.2V.
2. tRC =Read Cycle Time.
VCC for Data retention
DR
≥VCC -0.2V,
2.0 - 3.6 V
VIN≥VCC -0.2V or VIN≤0.2V
Data Retention Current VDR=2.0V 30
Chip Deselect to Data
Retention Waveform 0 - - ns
Retention Time
Operating Recovery Time t
RC
(2)
(1)
Max. Unit
- - ns
µA
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 3 -
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