G-LINK GLT725608 User Guide

查询GLT725608-12FB供应商

G-LINK

Ultra High Performance 32K x 8 Bit CMOS STATIC RAM

Features : Description :

∗ 32K x 8-bit organization. ∗ Very high speed 12,15,20 ns. ∗ Low standby power. ∗ Fully static operation ∗ 5V±10% power supply. ∗ TTL compatible I/O. ∗ Three state output. ∗ Chip enable for simple memory expansion. ∗ Available 300 mil SOJ, 28 pin TSOP and

330 mil SOP Packages.

∗ Industrial Grade Available (-40°C ~ 85°C).

GLT725608 is high performance 256K bit static random access memory organized as 32K by 8 bits and operate at a single 5 volt supply. Fabricated with G-Link Technology's very advanced CMOS submicron technology, GLT725608 offer a combination of features: very high speed and very low stand-by current. In addition, this device also supports easy memory expansion with an active LOW chip enable

(CE) as well as an active LOW output enable (OE) and three state outputs.

GLT725608

Feb, 2001(Rev.2.4)

Pin Configurations : Function Block Diagram :

SOJ and SOP

G-Link Technology

2701 Northwestern Parkway Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F, No. 24-2, Industry E, RD, IV, Science Based Industrial Park, Hsin Chu, Taiwan.

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G-LINK

CE

OE

WE

WECEOE

Pin Descriptions:

Name Function

A0 - A

I/O0 - I/O V

14

7

CC

GND Ground

Truth Table:

Address Inputs Chip Enable Input

Output Enable Input Write Enable Input Data Input and Data Output

+5V Power Supply

GLT725608

Ultra High Performance 32K x 8 Bit CMOS STATIC RAM

Feb, 2001(Rev.2.4)

Mode

Not Selected

X H X High Z

I/O Operation

(Power Down) Output Disabled H L H High Z

Read H L L Write L L X

Absolute Maximum Ratings:

Operation Range :

Range Temperature Vcc

Ambient Temperature

Under Bias...................................-10°C to

+80°C

Storage Temperature(plastic)....-55°C to

+125°C

Voltage Relative to GND.............-0.5V to +

7.0V

Data Output Current..................................50mA

Power Dissipation......................................1.0W

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATING may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Commercial 0°C to + 70°C 5V ± 10%

Industrial -40°C to 85°C 5V ± 10%

Capacitance

(1)

TA=25°°C,f=1.0MHZ :

Sym. Parameter conditions Max. Unit

C

IN

C

I/O

Input

Capacitance

Input / output

Capacitance

D

OUT

D

IN

VIN = 0V 8 pF

V

= 0V 10 pF

I/O

V Current

CC

I , I

CCSB CCSB1

I

CC

I

CC

I

CC

G-Link Technology

2701 Northwestern Parkway Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F, No. 24-2, Industry E, RD, IV, Science Based Industrial Park, Hsin Chu, Taiwan.

- 2 -

G-LINK

CCSB1

CE

CCDR

(1)

Ultra High Performance 32K x 8 Bit CMOS STATIC RAM

DC Characteristics

Sym. Parameter Test Conditions Min. Typ

V V I

I V

V I

I

Guaranteed Input Low

IL

Voltage Guaranteed Input High

IH

Voltage Input Leakage Current VCC= Max., VIN=0V to V

LI

Output Leakage Current

LO

Output Low Voltage VCC= Min., IOL =8mA - - 0.4 V

OL

Output High Voltage VCC= Min., IOH =-4mA 2.4 - - V

OH

Operating Power Supply

CC

Current Standby Power Supply

CCSB

Current Power Down Power

Supply Current

(2)

CC

VCC= Max., CE≥V

VCC= Max., CE≤VIL, I

=0mA., F= F

I/O

VCC= Max., CE≥VIH, I

=0mA., F= F

I/O

max

IH

(3)

VCC= Max., CE≥VCC.-0.2V, VIN≥VCC. -0.2V or

-0.3 - +0.8 V

2.2 - VCC+0.3 V

-5 - 5

- - -12 -15 -20

- -

- - 10 10 10 mA

GLT725608

(1)

Max. Unit

160 150 120 mA

40 30 20 mA

Feb, 2001(Rev.2.4)

µA µA

1. Typical characteristics are at VCC=5V, TA=25

2. These are absolute values with reject to device ground and all overshoots due to system or tester noise are included.

3. F

MAX

=1/tRC.

Data Retention

Sym. Parameter Test Conditions Min. Typ

V

I

t

CDR

t

R

1. CE ≥ VDR -0.2V, VIN ≥ VDR -0.2V or VIN ≤ 0.2V.

2. tRC =Read Cycle Time.

VCC for Data retention

DR

≥ VCC -0.2V,

2.0 - 5.5 V

VIN ≥ VCC -0.2V or VIN ≤ 0.2V

Data Retention Current VDR=2.0V - 30

VDR=3.0V 50

Chip Deselect to Data

0 - - ns Retention Time See Retention Waveform Operating Recovery Time t

RC

(2)

(1)

Max. Unit

- - ns

µA µA

G-Link Technology

2701 Northwestern Parkway Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F, No. 24-2, Industry E, RD, IV, Science Based Industrial Park, Hsin Chu, Taiwan.

- 3 -

G-LINK

Ultra High Performance 32K x 8 Bit CMOS STATIC RAM

Low VCC Data Retention Waveform (CE Controlled)

AC Test Conditions

Input Pulse Levels 0V to 3.0V Input Rise and Fall Times

Timing Reference Level

AC Test Loads and Waveforms

3 ns

1.5V

GLT725608

Feb, 2001(Rev.2.4)

AC Electrical Characteristics Read Cycle

JEDEC

Parameter

Name

t

AVAX

t

AVQV

t

E1LQV

t

GLQV

t

E1LQX

t

GLQX

t

E1HQZ

t

GHQZ

t

AXQX

Parameter

Name Parameter

t

t t

t

RC

t

AA

ACS

t

OE

CLZ

OLZ CHZ

OHZ

t

OH

Read Cycle Time Address Access Time

Chip Select Access Time, Output Enable to Output Valid

Chip Select to Output Low Z, Output Enable to Output in Low Z

Chip Deselect to Output in High Z, Output Disable to Output in High Z

Output Hold from Address Change

Ω

725608-12

Min. Max.

Ω

725608-15

Min. Max.

725608-20

Min. Max. Unit

12 - 15 - 20 - ns

- 12 - 15 - 20 ns

CE

- 12 - 15 - 20 ns

- 5 - 6 - 8 ns

CE

3 - 3 - 3 - ns 3 - 3 - 3 - ns

CE

- 7 - 8 - 10 ns

- 6 - 6 - 8 ns 3 - 3 - 3 - ns

G-Link Technology

2701 Northwestern Parkway Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F, No. 24-2, Industry E, RD, IV, Science Based Industrial Park, Hsin Chu, Taiwan.

- 4 -

G-LINK GLT725608 User Guide

Specifications and Main Features

Frequently Asked Questions

User Manual