G-LINK GLT625608-70FB, GLT625608-10TS, GLT625608-10TC, GLT625608-10J3, GLT625608-10FB Datasheet
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G-LINK
32K x 8 SLOW SPEED CMOS STATIC RAM
Features : Description :
GLT625608
Feb, 2001(Rev. 1.1)
∗ Available in 70/100ns(MAX.)
∗ Automatic power-down when chip disabled
∗ Low power consumption:
GLT625608
-467.5mW(Max.) Operating
∗ -500µW(Max.)Standby
∗ TTL compatible interface levels
∗ Single 5V power supply
∗ Fully static operation
∗ Three state outputs
∗ 256K bit EPROM pin compatible
∗ Data Retention as low as 2V
∗ Industrial Grade (-40°C~85°C) available.
Pin Configurations:
GLT625608
GLT625608 is a 262,144-bit static random access
memory organized as 32,768 words by 8 bits and
operates from a single 5 volt supply. Inputs and
three-state outputs are TTL compatible and allow for
direct interfacing with system I/O bus. The
GLT625608 is available in a standard 330 mil SOP
packages. Other packages will also available upon
request.
Function Block Diagram :
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
- 1 -
G-LINK
WE
OE
CE
WECEOE
Pin Descriptions:
Name Function
A0 - A
I/O0-I/O
Truth Table:
14
7
V
cc
GND Ground
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
Address Inputs
Write Enable
Output Enable
Chip Enable
Data Input/Output
Power Supply (+5V)
Mode
Not Selected X H X High Z ISB,I
( Power down ) High Z ISB,I
Output Disabled H L H High Z I
Read H L L D
Write L L X D
I/O Operation Supply Current
OUT
IN
NOTE: X : H or L
Absolute Maximum Ratings:
Ambient Temperature
Under Bias...................................-10°C to +80°C
Storage Temperature(plastic)....-55°C to +125°C
Operation Range :
RANGE AMBIENT
TEMPERATURE
Commercial
Industrial
0°C to + 70°C 5V ± 10%
-40°C to 85°C 5V ± 10%
Voltage Relative to GND.............-0.5V to + 7.0V
Data Output Current..................................50mA
Power Dissipation......................................1.0W
1.Stresses greater than those listed under ABSOLUTE
MAXIMUM RATING may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Capaccitance
SYMBOL PARAMETER
CIN
CDQ
1.This parameter is guaranteed and tested.
(1)
(TA=25°°C,F=1.0MHZ)
CONDIT
IONS
Input
Capacitance
Input/Output
capacitance
VIN=0V 6 pF
VI/O=0 8 pF
SB1
SB1
CC
I
CC
I
CC
Vcc
MAX. UNIT
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
- 2 -
G-LINK
(1)
CCSB1
CE
CE
RC
(2)
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
DC Characteristics
Sym. Parameter Test Conditions Min. Typ
V
V
I
I
V
V
I
I
I
Guaranteed Input Low
IL
Voltage
Guaranteed Input High
IH
Voltage
Input Leakage Current VCC=Max., VIN=0V to V
LI
Output Leakage Current
LO
Output Low Voltage VCC=Min.,IOL =8mA - - 0.4 V
OL
Output High Voltage VCC=Min., IOH =-4mA 2.4 - - V
OH
Operating Power Supply
CC
Current
Standby Power Supply
CCSB
Current
Power Down Power
Supply Current
(2)(3)
(2)
CC
VCC=Max.,CE≥V
VCC=Max., CE≤VIL,
I
=0mA., F=F
I/O
VCC=Max., CE≥VIH,
I
=0mA., F=F
I/O
max
max
IH
(3)
(3)
VCC=Max., CE≥VCC.-0.2V,
VIN≥VCC. -0.2V or
-0.3 - +0.8 V
2.2 - VCC+0.3 V
-5 - 5
-5 - 5
- - 100
- - 20
- 10 10 mA
1. Typical characteristics are at VCC=5V, TA=25°C.
2. These are absolute values with repeat to device ground and all overshoots due to system or
tester noise are included.
3. F
MAX
=1/tRC.
Max. Unit
Data Retention
µA
µA
mA
mA
Sym. Parameter Test Conditions Min. Typ Max. Unit
V
I
t
t
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
VCC for Data retention
DR
≥ VCC -0.2V
VIN ≥ VCC -0.2V or VIN ≤ 0.2V
Data Retention
CCDR
Current
Chip Deselect to Data
CDR
≥ VDR - 0.2V
VIN ≥ VDR - 0.2V or VIN ≤ 0.2V
Retention Time See Retention Waveform
Operating Recovery
R
Time
1. VDR = 3V, TA = Specified
2. tRC = Read Cycle Time
- 3 -
2.0 - - V
- 2 50
0 - - ns
t
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
- - ns
µA
(1)
)
G-LINK
Low VCC Data Retention Waveform (CEControlled )
AC Test Conditions
Input Pulse Levels 0V to 3.0V
Input Rise and Fall Times 3ns
Input and Output Timing
Reference Level
1.5V
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
AC Test Loads and Waveforms
Ω Ω
Ω
Ω
Ω
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
- 4 -
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