GHz Technology VTV150 Datasheet

VTV150

15 Watts, 25 Volts

VHF Television - Band III

GENERAL DESCRIPTION CASE OUTLINE

The VTV 150 is a COMMON EMITTER transisto r capable of pr oviding 15
Watts Pea k Sync, Cl ass A, RF O utput Power over the band 175 - 225 MHz. It
is designed for high efficiency, high linereity, Class A operation. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.

55HV, STYLE 2

ABSOLUTE MAXIM UM RATINGS

Maximum Power Dissipation @ 25 C 97 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 45 Volts
BVceo Collector to Emitter Voltage 25 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Coll ecto r Current 8.0 Amps

Maximum Temperatures

Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

o

o
o

O

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg

η

1

IMD
VSWR

LVceo
BVces
BVebo
h

FE

Cob

jc

θ

Power Out - Pk Sync F = 175-225 MHz 15 20 Watts
Powe r Input Vcc = 25 Vo lts 1.9 Watts
Powe r Gain Ic = 2.4 Amps 8.0 9.0 dB
Eff i cien cy 33 %
Intermodulation Distortion Pref = 15 Watts -52 dB

1

Load Mismatch Tol erance F = 225 MHz

Collector to Emitter Breakdown Ic = 25 mA 28 Volts
Collector to Base Breakdown Ic = 100mA 45 Volts
Emitter to Base Breakdown Ie = 10mA 4.0 Volts
Current Gain Vce = 5 V, 1 mA 10
Output Capacitanc e Vcb = 25 V, F = 1 MHz 68 pF
Thermal Resistance Tc = 25 C 1.6 1.8 C/W

1

3:1

o o

Note 1: European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB

Issu e October 1997

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOM M E NDS THAT BEFORE
TH E PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakm ead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

VTV 150