GHz Technology VMIL100 Datasheet

VMIL 100

100 Watts, 28 Volts, Class AB

Defcom 100 - 200

GENERAL DESCRIPTION

The VMIL100 is an input matched COMMON EMITTER broadband
transistor specifically intended for use in the 100-200 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 270 Watts

Maximum Voltage and Current

BVces Collector to Emiter Voltage 65 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 20 A

Ma ximum Temperatures

Storage Temperature - 65 to +150 C
Operating Junction Temperature +150 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

o

o
o

O

CASE OUTLINE

55HV, Style 2

MHz

Pout
Pin
Pg

η

c

VSWR

BVebo
BVces
BVceo
Cob
h

FE

θ

jc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance

Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance

F = 175 MHz
Vcc = 28 Volts

Po=100W, F=175 MHz

Ie = 5 mA
Ic = 100 mA
Ie = 50 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 1 A

100

7.0

4.0
65
33

10

14

8.5
60

220

20

30:1

.65

Watts
Watts

dB

%

Volts
Volts
Volts

pF

o

C/W

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

VMIL100

August 1996