GHz Technology VAM80 Datasheet

VAM 80

80 Watts, 27 Volts, Class AB

8

10

4.0

7.0
65

MHz

10

5.0

30:1

Defcom 100 - 150

GENERAL DESCRIPTION

The VAM 80 is a COMMON EMITTER, specifically designed for collector
modulated operation in the VHF AM applications in the 100-150 MHz range.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 85 Watts

Maximum Voltage and Current

BVces Collector to Emiter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 8.5 A

Ma ximum Temperat ure s

Storage Temperature - 65 to +150 C
Operating Junction Temperature +200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg
Pout
Pin
Pg

η

c

VSWR

Power Output
Power Input
Power Gain

Efficiency
Load Mismatch Tolerance

o

o
o

O

F = 150 MHz
Vcc =27V, 1 KHz, 50%

F = 150 MHz
Vcc = 13.5 Volts

Vcc = 13.5V, Po=20W

CASE OUTLINE

55HT, Style 2

80

9.0
20

6.0

Watts
Watts

dB

Watts

Watts

dB

%

BVebo
BVces
BVceo
Cob
h

FE

θ

jc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance

Ie = 5 mA
Ic = 20 mA
Ie = 50 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 1 mA

4.0
60
32

10

75

2.0

Volts
Volts
Volts

pF

o

C/W

VAM80

August 1996