GHz Technology VAM120 Datasheet

VAM 120
120 Watts, 27 Volts, Class AB
Defcom 100 - 150
The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 140 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage 60 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 12 A
Ma ximum Temperatures
Storage Temperature - 65 to +150 C Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
o
o o
O
CASE OUTLINE
55HT, Style 2
MHz
Pout Pin Pg Pout Pin Pg
η
c
VSWR
BVebo BVces BVceo Cob h
FE
θ
jc
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Power Output Power Input Power Gain
Efficiency Load Mismatch Tolerance
Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Output Capacitance DC - Current Gain Thermal Resistance
F = 150 MHz Vcc = 27 Volts
F = 150 MHz Vcc = 13.5 Volts
Ie = 5 mA Ic = 20 mA Ie = 50 mA
Vce = 5 V, Ic = 1 A
120
7.8 30
4.8
4.0 60 32
10
15
9.0
7.5
6.0 65
240
20
10
30:1
1.2
Watts Watts
dB Watts Watts
dB
%
Volts Volts Volts
pF
o
C/W
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
VAM -120
August 1996
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