GHz Technology UTV200 Datasheet
UTV200
20 Watts, 26.5 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 200 is a COMMON EMITTER transistor capable of providing 20
Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input prematching for full broadband capability.
Gold Metalization and Diffused Ballasting are used to provide high reliability
and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 80 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVceo Collector to Emitter Voltage 28 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 4.5 Amps
Ma ximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o
o
o
O
CASE OUTLINE
55JV, STYLE 2
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
1
IMD
VSWR
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
1
Load Mismatch Tolerance
F = 470 - 860 MHz
Vcc = 26.5 Volts
Ic = 2.7 Amps
Pref = 20Watts
F = 860 MHz
20
8.5 9.5
-48
2.8
Watts
Watts
-46
3:1
dB
dB
2
LVceo
BVces
BVebo
2
h
FE
2
Cob
θ
jc
Collector to Emitter Breakdown
2
Collector to Base Breakdown
2
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 40 mA
Ic = 20mA
Ie = 10 mA
Vce = 5 V, 1 A
Vcb = 26 V, F = 1 MHz
Tc = 25 C
o
28
50
4
10 150
36
1.2
Volts
Volts
Volts
pF
o
C/W
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Note 2: Per side
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV200
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