UTV100B
100 Watts Pk, 28 Volt, Class AB
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV100B is a COMMON EMITTER transistor capable of providing 100
Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input and output prematching for full broadband
capability. Gold Metalization and Diffused Ballasting are used to provide
high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 290 Watts
Maximum Voltage and Current
BVcbo Collector to Emiter Voltage 65 Volts
BVceo Collector to Emitter Voltage 30 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 15 Amps
Ma ximum Temperatures
Storage Temperature -40 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL CHARACTERISTICS TEST
o
o
o
O
CONDITIONS
CASE OUTLINE
55RT, STYLE 2
MIN TYP MAX UNITS
PldB
Pin
Po - ref
Pg
η
VSWR
Power Out - 1 dB Compression
Power Input
Power Output - Linear
Power Gain - Small Sig
Efficiency
Load Mismatch Tolerance
F =470 - 860 MHz
Vcc = 28 Volts
Icq = 300 mA (total)
Pout = 25 Watts Pk
100
25
8.5
55
5:1
Watts
12.5
Watts
Watts
dB
%
* European Test Method, Vision = -8 dB, Sideband = - 16 dB, Sound = - 7 dB
BVceo
BVces
BVebo
Hfe
Cob
Rθjc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance - (each side)*
Thermal Resistance
Ic = 25 mA
Ic =25 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Vcb = 28V, F=1MHz
Tc = 25 C
o
30
60
3.5
20
120
47
0.6
Volts
Volts
Volts
pF
o
C/W
* Not measureable due to internal prematch network
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120