GHz Technology UDR-500 Datasheet

UDR-500

500 Watts - 40 Volts, Pulsed

Radar 400 - 450 MHz

GENERAL DESCRIPTION

The UDR-500 is an internally matched, COMMON EMITTER transistor
capable of providing 500 Watts of pulsed RF output power at sixty
microseconds pulse width, two percent duty factor across the band 400-450
MHz. This hermetically solder sealed tran sistor is specifically designed for
long pulse radar applications. It utilizes gold metalization and diffused emitter
ballasting to provide high reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 1167 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 35 Amps

Ma ximum Temperatures

Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg

η

c

VSWR

Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance

o

o
o

O

F = 450 MHz
Vcc = 40 Volts
Pulse Width = 60 µs
Duty = 2%
Rated Conditions

CASE OUTLINE

55JV, STYLE 2

500

8.5

535

70

60

5:1

Watts
Watts

d B

%

BVces
BVceo
BVebo
Hfe
Cob

θjc

Initial Issue June, 1994

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance

Ic = 50 mA
Ic = 30 mA
Ie = 20 mA
Vce =5 V, Ic =1A
Vcb = 40V, F =1 MHz
Rated Pulse Condition

70
30

4.0
20

60

0.15

Volts
Volts

o

C/W

UDR-500

August 1996