GHz Technology TPR700 Datasheet
TPR 700
700 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 700 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input returns for
package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 2050 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 55 Amps
Ma xi mum Te mperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
fast rise time
o2
. Low thermal resistance
o
o
O
CASE OUTLINE
55KT, Style 1
Common Base
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
t
r
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Rise Time
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
700
6.7
43
150
70
30:1
Watts
Watts
dB
%
ns
3
BVebo
BVces
h
FE
2
jc
θ
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 50mA
Ic = 100mA
Ic = 1000mA, Vce = 5 V
3.5
65
10
0.08
Volts
Volts
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3: Cannot measure due to input return
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
Typical Performance
TPR 700
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