GHz Technology TPR400 Datasheet

TPR 400

400 Watts, 50 Volts, Pulsed

Avionics 1030 - 1090 MHz

GENERAL DESCRIPTION CASE OUTLINE

The TPR 400 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.

55CX, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 875 Watts

Maximum Voltage and Current

BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 30 Amps

Maxi mu m T emperatures

Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMB O L CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg

η

c

VSWR

BVebo
BVces
h

FE

2

θ

jc

Note 1: At rated output power and pulse conditions
2: At rated pulse conditions

Power Out F = 1030-1090 MHz 400 Watts
Power Input Vcc = 50 Volts 75 Watts
Power Gain 7.27 dB
Collect or Effici ency 40 %
Load Mismatch Tolerance 20:1

Emitter to Base Breakdown Ie = 20 mA 4.0 Volts
Collector to Emitter Breakdown Ic = 25 mA 55 Volts
DC - Current Gain Ic = 2.5 A, Vce = 5 V 10 100
Therma l Resistance 0.2 C/W

o2

o

o

O

PW = 10 µsec
DF = 1%
F = 1090 MHz

o

Issue B, February 1998

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz R E C OMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

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TPR400