GHz Technology TPR175 Datasheet
TPR 175
175 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION CASE OUTLINE
The TPR 175 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 388 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 12.5 Amps
Maxi mu m T emperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMB O L CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
BVebo
BVces
h
FE
2
θ
jc
Power Out F = 1090 MHz 175 Watts
Power Input Vcc = 50 Volts 25 Watts
Power Gain 8.0 9.0 dB
Collect or Effici ency 40 %
Load Mismatch Tolerance 00:1
Emitter to Base Breakdown Ie = 5 mA 3.5 Volts
Collector to Emitter Breakdown Ic = 20 mA 55 Volts
DC - Current Gain Ic = 20 mA, Vce = 5V 10
Therma l Resistance 0.45 C/W
o2
o
o
O
PW = 10 µsec
DF = 1%
F = 1090 MHz
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue A February 1998
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz R E C OMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TPR 175
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