GHz Technology TCS600 Datasheet
R.1.A.992005-HERICK
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOT I CE . GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HE REIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986 - 8120
TCS600
600 Watts, 50 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS600 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030/1090 MHz, with the
pulse width and duty required for TCAS applications. The device has gold thinfilm metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55ST Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C 1458 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)65V
Emitter to Base Voltage (BV
ebo
)3.5 V
Collector Current (I
c
)40A
Maxi mu m T emperature s
Storage Temperature -65 to +200°C
Operating J unction Temperature +230°C
ELECTRICAL CHARACTERISTICS @ 25
°°°°
C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Out F = 1030 MHz 600 W
P
in
Power Input VCC = 50 Volts 80 W
P
g
Power Gain
PW = 32 µsec
8.7 dB
η
c
Collector Efficiency DF = 1% 50
Pd
Pulse Droop 0.5 dB
VSWR Load Mismatch Tolerance F = 1030 MHz 4:1
FUNCTIONAL CHARACTERISTICS @ 25
°°°°
C
BV
ebo
* Emitter to Base Breakdown Ie = 50 mA 3.5 V
BV
ces
Collector to Emitter Breakdown Ic = 100 mA 65 V
hFE* DC – Current Gain Vce = 5V, Ic = 5A 20
θ
jc
1
Thermal Resistance 0.12
°
C/W
NOTE 1: At rated output power and pulse conditions.
*: Not measureable due to internal EB returns.
Initial Issue MAY 1999
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