GHz Technology TAN350 Datasheet
TAN 350
350 Watts, 50 Volts, Pulsed
Avionics 960 – 1215 MHz
R.-.101199
GENERAL DESCRIPTION
TAN 350
The
is a high power COMMON BASE bipolar transistor. It is
CASE OUTLINE
55ST Style 1
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25!C (P
Voltage and Current
Collector to Base Voltage (BV
Emitter to Base Voltage (BV
Collector Current (I
)40A
c
Temperatures
Storage Temperature -65 to +200!C
Operating J unction Temperature +230!C
ELECTRICAL CHARACTERISTICS @ 25
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
P
in
P
g
#
c
Power Out F = 960 – 1215 MHz 350 W
Power Input VCC = 50 Volts 70 W
Power Gain
Collector Efficiency DF = 10% 38 40 %
VSWR Load Mismatch Tolerance F = 1090 MHz 3:1
) 1450 W (At rated pulse condition)
d
)65V
ces
)2.0 V
ebo
!!!!
C
PW = 10 "sec
7.0 7.5 dB
FUNCTIONAL CHARACTERISTICS @ 25
BV
BV
ebo
ces
Emitter to Base Breakdown Ie = 25 mA 2.0 V
Collector to Emitter
!!!!
C
Ic = 50 mA 65 V
Breakdown
h
FE
2
$
jc
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CUR RENT VERS IO N
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
DC – Current Gain Ic = 1A, Vce = 5V 10
Thermal Resistance .12
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECT.
!
C/W
TAN350
Frequency
5
4
3
REAL(Ohm)
2
1
960 1030 1090 1150 1215
PW 10uS, DF=10%
Zin ZCL
R jx R jx
960 1.87 2.58 1.2 2.92
1030 1.96 1.92 1.06 2.71
1090 2.12 1.27 0.96 2.47
1150 2.33 0.65 0.91 2.3
1215 2.67 0.03 0.89 2.03
SERIES INPUT IMPEDANCE V.s FREQUENCY
VCB=50V Pout=350 W
R
jx
FREQUENCY(MHz)
3
2
1
0
-1
-2
-3
-4
-5
IMAGINARY
SERIES COLLECTOR LOAD IMPEDANCE V.s FREQUENCY
VCB=50V Pout= 350 W
1.45
1.35
1.25
1.15
1.05
REAL(Ohm)
0.95
0.85
0.75
R
jx
960 1030 1090 1150 1215
FREQUENCY(MHz)
3.5
3
2.5
2
1.5
1
0.5
0
IMAGINARY
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