GHz Technology TAN300 Datasheet

TAN 300

300 Watts, 50 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION

The TAN 300 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 1166 Watts

Maximum Voltage and Current

BVces Collector to Base Voltage 65 Volts
BVebo Emitter to Base Voltage 2.0 Volts
Ic Collector Current 20 Amps

Ma ximum Temperatures

Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

o2

o
o

O

CASE OUTLINE

55KT Style 1

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg

η

c

VSWR

Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance

F = 960-1215 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 10%
F = 1090 MHz

300

6.6
45

60

10:1

Watts
Watts

dB

%

BVebo
BVces
h

FE

2

jc

θ

Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance

Ie = 25 mA
Ic = 50 mA
Ic = 1A, Vce = 5 V

2.0
65
10

.15

Volts
Volts

o

C/W

Note 1: At rated output power and pulse conditions
2: At rated pulse conditions

Initial Issue June, 1994

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

.

TAN300

June 1996