GHZ S175-50 Datasheet

S175 - 50

175 Watts, 50 Volts, Class AB

Milcom 1.5 - 30

GENERAL DESCRIPTION

The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A,
AB or C operation in the HF/VHF frequency bands. Its high collector voltage
simplifies the design of wideband, SSB linear amplifiers. The transistor chip is
built using Gold Topside Metal, diffused emitter ballast resistors and silicon
nitride passivation, providing the user with the Highest MTTF available.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 270 Watts

Maximum Voltage and Current

BVces Collector to Emiter Voltage 110 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 20 A

Ma ximum Temperatures

Storage Temperature - 65 to +150 C
Operating Junction Temperature +200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

o

o
o

O

CASE OUTLINE

55HX, Style 2

MHz

Pout
Pin
Pg

η

c

VSWR

BVebo
BVces
BVceo
Zin
ZI
Cob
h

FE

IMD

Initial Issue June, 1994

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance

Emitter to Base Breakdown
Collector to Emitter
Breakdown
Collector to Emitter
Breakdown
Series Input Impedance
Series Load Impedance
Output Capacitance
DC - Current Gain
Intermodulation Distortion Lev.

F = 30 MHz
Vcc = 50 Volts
At Rated Power Out

Ie = 10 mA
Ic = 100 mA
Ie = 100 mA
At Rated Pout & Freq.
At Rated Pout & Freq.
Vcb = 50 V, Ie = 0
Vce = 5 V, Ic = 2 A
At Rated Pout

175

17

4

110

53

10

17.5
65

0.6-j0.4

4.6+2.1
180

-35

3.5

30:1

Watts
Watts

dB

%

Volts
Volts

Volts
OHMS
OHMS

dBc

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

S175-50