GHZ MDS800 Datasheet

PRELIMINARY

R.3.110599

MDS800

800 Watts, 50 Volts, Pulsed

Avionics 1090 MHz

GENERAL DESCRIPTION

The MDS800 is a high power COMMON BASE bipolar transistor. It is

CASE OUTLINE

55ST Style 1

designed for pulsed systems in the frequency band 1090 MHz, with the pulse
width and duty required for MODE-S applications. The device has gold thin­film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25°C 1750 Watts

Maximum Voltage and Current

Collector to Base Voltage (BV
Emitter to Base Voltage (BV
Collector Current (I

) 60.0 Amps

c

Maxi mum Temp e r a t u r e s

Storage Temperature -65 to +200°C
Operating Junction Temperature +230°C

ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

P
P
P

η

Pd
RL

out

in

g

c

Power Out 800 W
Power Input 110 W
Power Gain 8.5 dB
Collector Efficiency 40 %
Power Droop 0.5 dB

Return Loss -12 dB

VSWR Load Mismatch Tolerance

) 60 V

CES

) 3.5 V

EBO

F = 1090 MHz
V

= 50 Volts

CC

PW = 128 µsec
LTDF = 2%
F = 1090 MHz

4:1

FUNCTIONAL CHARACTERISTICS @ 25°C

BV

CES

BV

EBO*

h

FE

2

θjc

Note 1: At rated output power and pulse conditions
Note 2: Burst is 0.5µs and 0.5µs off for 128µs
* : Not measureable due to internal EB returns

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION

GHz Technology Inc . 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Collector to Emitter Breakdown Ie = 30 mA 65 V
Emitter to Base Breakdown Ie = 50mA 3.5 V
DC – Current Gain Vce = 5V, Ic = 5A 20 100
Thermal Resistance 0.12

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