GHZ MDS550L Datasheet

R.3.110599

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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel . 408 / 986-8031 Fax 408 / 986-8120

MDS550L

550 Watts, 45 Volts, Pulsed

Avionics 1090 MHz

PRELIMINARY

GENERAL DESCRIPTION

The MDS550L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1090 MHz. The transistor
includes input and output prematch for broadband performance. The device has
gold thin-film metallization and diffused ballasting for proven highest MTT F.
Low thermal resistance. Package reduces junction temperature, extends life,
high strength lead braze.

CASE OUTLINE

55SW Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipat ion

Device Dissipation @25°C 1166 W

Maximum Voltage and Current

Collector to Base Voltage (BV

ces

)55V

Emitter to Base Voltage (BV

ebo

)3.5 V

Collector Current (I

c

)40mA

Maxi mu m T emperature s

Storage Temperature -65 to +150 °C
Operating J unction Temperature +200 °C

ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

P

out

Power Out F = 1090 MHz (Note 2) 550 W

P

in

Power Input Vcc = 45 Volts 90 W

P

g

Power Gain PW = NOTE 1 7.8 dB

η

c

Collector Efficiency DF = NOTE 1 45 %
VSWR Load Mismatch Tolerance f = 1090 MHz 4:1
Pd Pulse Droop f = 1090 MHz (NOTE 2) 0.5

FUNCTIONAL CHARACTERISTICS @ 25°C

BV

ebo

*

Emitter to Base Breakdown Ie = 50 mA 3.5 V
BV

ces

Collector to Emitter Breakdown Ic = 30 mA 55 V
h

FE

*

DC – Current Gain Vce = 5V, Ic = 5.0 A 20
θjc

2

Thermal Resistance 0.15

°C/W

NOTE 1: MODE-S PULSE BURST 2160 µS @ 50% DUTY CYCLE, LONG TERM DF = 1%.
NOTE 2: AT RATED PULSE CONDITIONS
*: Not measureable due to internal EB returns

Initial issue May 199 9