GHZ MDS400 Datasheet

MDS400

400 Watts Pk, 45 Volts, 32µs, 2%

Avionics 1030-1090 MHz

GENERAL DESCRIPTION

The MDS400 is a COMMON BASE transistor capable of providing 400 Watts
Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor
includes double input prematching for full broadband capability. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 1450 Watts

Maximum Voltage and Current

BVces Collector to Emiter Voltage 55 Volts
BVebo Collector to Base Voltage 4.0 Volts
Ic Collector Current 40 Amps

Ma ximum Temperatures

Storage Temperature
Operating Junction Temperature + 200

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST

Po
Pin
Pg
h
VSWR

1

Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance

o

-40 to + 200(C

(

C

O

CONDITIONS

F =1030/1090 MHz
Vcc=45Volts
Pulse Width = 32
Duty Factor = 2 %
At Rated Power

CASE OUTLINE

55KT, STYLE 1

MIN TYP MAX UNITS

400

90

)

s

6.5
35

10:1

Watts
Watts

dB

%

BVces
BVebo
H

fe

θ

jc

R

Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Thermal Resistance

Ic = 50 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Tc = 25 C

o

55

3.5

10

0.12

Volts
Volts

o

C/W

Issue September 22, 1995

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120