GHZ MDS350L Datasheet

R.3.A.992605-HERIC

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOT I CE . GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HE REIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986 - 8120

MDS350L

350 Watts, 45 Volts, Pulsed

Avionics 1030 - 1090 MHz

ADVANCED ISSUE

GENERAL DESCRIPTION

The MDS350L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 - 1090 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.

CASE OUTLINE

55KT Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25°C 583 W

Maximum Voltage and Current

Collector to Base Voltage (BV

ces

)55V

Emitter to Base Voltage (BV

ebo

)3.5 V

Collector Current (I

c

)30A

Maxi mu m T emperature s

Storage Temperature -65 to +200°C
Operating J unction Temperature +200°C

ELECTRICAL CHARACTERISTICS @ 25

°°°°

C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

P

out

Power Out F = 1090 MHz 350 W

P

in

Power Input Vcc = 45 Volts 55 W

P

g

Power Gain PW = Note 1 8 dB

η

c

Collector Efficiency DF = Note 1 47 %

VSWR Load Mismatch Tolerance F = 1030 MHz 2:1

FUNCTIONAL CHARACTERISTICS @ 25

°°°°

C

BV

ebo

Emitter to Base Breakdown Ie = 50 mA 3.5 V

BV

ces

Collector to Emitter Breakdown Ic = 100 mA 55 V

h

FE

DC – Current Gain Vce = 5V, Ic = 2A 20

θ

jc

2

Thermal Resistance 0.3

°

C/W

NOTE 1: 250 µs at 10% Duty

2. At rated pulse conditions
.
Initial Issue May 1999