GHZ JTDA50 Datasheet
JTDA 50
50 Watts, 36 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The JTDA 50 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 220 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 7.0 Amps
Ma ximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o2
o
o
O
CASE OUTLINE
55AT, STYLE 1
SEE NOTE BELOW
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 36 Volts
PW = 10 µsec
DF = 20%
F = 1090 MHz
50
7.0
40
10
10:1
Watts
Watts
dB
%
BVebo
BVces
Cob
h
FE
2
jc
θ
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 25 mA
Ic = 25 mA
Vcb = 36V
Ic = 750 mA, Vce = 5 V
3.5
55
20 100
0.8
Volts
Volts
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the
mounting area, refer to 55AW.
Issue June, 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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