GHZ ITC1100 Datasheet
ITC1100
1000 WATT, 50V, Pulsed
Avionics 1030 MHz
R.1.120799
GENERAL DESCRIPTION
The ITC1100 is a common base bipolar transistor. It is designed for pulsed
interrogator systems in the frequency band of 1030 MHz. The device has gold
thin-film metallization for proven high MTTF. The transistor includes input
returns for improved output rise time . Low thermal resistance package reduces
junction temperature which extends the life time of the product.
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation
Thermal Resistance
Voltage and Current
Collector-Base Voltage 65V
Emitter-Base Voltage 3.5V
Collector Current
Temperatures
Storage Temperature -40 to +150°C
Operating J unction Temperature
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST
2
BVebo
BVces
2
BVceo
2
h
FE
1
@25°C (Pd) 3400 W
1
(θJC).08°C/W
1
1
80A
+200°C
CONDITIONS
Emitter-Ba se Breakdown(open) Ie=50mA
Collector-Emitter Breakdown(shorted) Ic=30mA
Collector-Emitter Breakdown (open) Ic=30mA
DC Current Gain Ic=5A, Vce=5V
CASE OUTLINE
55SW, Style 1
Common Base
MIN TYP MAX UNITS
3.5 V
65 V
30 V
20 100
β
FUNCTIONAL CHARACTERISTICS @ 25°C
G
PB
η
c
t
r
VSWR
Z
in
Z
out
1
At rated output power and pulse conditions
2
Not measurable due to EB Returns
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
GHz Technology Inc . 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
Common Base Power Gain Vcc = 50V, F = 1030MHz,
P
=1000W Peak Min, PW=1µS, DF=1%
out
Collector Efficiency Vcc = 50V, F = 1030MHz,
=1000W Peak Min, PW=1µS, DF=1%
P
out
Rise Time Vcc = 50V, F = 1030MHz,
=1000W Peak Min, PW=1µS, DF=1%
P
out
Output Load Mismatch Vcc = 50V, F = 1030MHz,
=1000W Peak Min, PW=1µS, DF=1%
P
out
Series Input Impedance (Circuit
source impedance @ test cond.)
Series Output Impedance (Circuit
load impedance @ te s t co nd .)
PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT.
P
out
P
out
= 50V, F = 1030MHz,
V
cc
=1000W Peak Min, PW=1µS, DF=1%
Vcc = 50V, F = 1030MHz,
=1000W Peak Min, PW=1µS, DF=1%
10 10.5 dB
45 50 %
50 80 nS
4:1
0.89 – j2.3
0.54 - j2.64
Ψ
Ω
Ω
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