GHZ ITC1000 Datasheet
R.A.P.990305-BEHRE
ITC1000
1000 WATT, 50V, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The
ITC1000
interrogator systems in the frequency band of 1030 MHz. The device has gold
thin-film metallization for proven high MTTF. The transistor includes input
returns for improved output rise time . Low thermal resistance package reduces
junction temperature which extends the life time of the product.
is a common base bipolar transistor. It is designed for pulsed
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation
Thermal Resistance
Voltage and Current
Collector-Base Voltage 65V
Emitter-Base Voltage 3.5V
Collector Current
Temperatures
Storage Temperature -40 to +150°C
Operating J unction Temperature
ELECTRICAL CHARACTERISTICS @ 25
SYMBOL CHARACTERISTICS TEST
2
BVebo
BVces
2
BVceo
2
h
FE
1
@25°C (Pd) 3400 W
1
θ
(
).08
JC
1
1
°
C/W
80A
+200°C
°°°°
C
CONDITIONS
Emitter-Ba se Breakdown(open) Ie=50mA
Collector-Emitter Breakdown(shorted) Ic=30mA
Collector-Emitter Breakdown (open) Ic=30mA
DC Current Gain Ic=5A, Vce=5V
CASE OUTLINE
55SW, Style 1
Common Base
MIN TYP MAX UNITS
3.5 V
65 V
30 V
20 45 80
β
FUNCTIONAL CHARACTERISTICS @ 25
G
PB
η
c
t
r
VSWR
Z
in
Z
out
1
At rated output power and pulse conditions
2
Contains input returns and cannot be measured
Initial Issue May 1999
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR
USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONT ACTI NG THE FACTORY.
GHz Technology Inc . 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
Common Base Power Gain Vcc = 50V, F = 1030MHz, P
Collector Efficiency Vcc = 50V, F = 1030MHz, P
Rise Time Vcc = 50V, F = 1030MHz, P
Output Load Mismatch
Series Input Impedance (Circuit
source impedance @ test cond.)
Series Output Impedance (Circuit
load impedance @ te s t co nd .)
°°°°
C
PW=1µS, DF=1%
PW=1µS, DF=1%
PW=1µS, DF=1%
= 50V, F = 1030MHz, P
V
cc
PW=1µS, DF=1%
Vcc = 50V, F = 1030MHz, P
Vcc = 50V, F = 1030MHz, P
PW=1µS, DF=1%
PW=1µS, DF=1%
=1000W,
out
=1000W,
out
=1000W,
out
=1000W,
out
=1000W,
out
=1000W,
out
8.0 8.5 dB
35 45 %
50 80 nS
4:1
1.0-j2.0
0.6-j2.1
Ψ
Ω
Ω
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