GHZ GHZ20060 Datasheet
Updated Feb 2001
GENERAL DESCRIPTION
The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts
of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is
specifically designed for
LINEAR COMMUNICATIONS BASE STATION
amplifier applications. It includes single stage input and single output prematching. It
utilizes Gold metalization and EMITTER ballasting to provide high reliability and
supreme ruggedness. The GHz20060 is in the industry standard Beryllium Oxide
(BeO) package design to drop into existing applications.
CASE OUTLINE
55SW, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC 250 Watts
Maximum Voltage and Current
Bvceo Collector to Emitter Voltage 25 Volts
BVces Collector to Emitter Voltage 60 Volts
BVcbo Collector to Base Voltage 60 Volts
BVebo Emitter to Base Voltage 3 Volts
Ic Collector Current 8.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150
o
C
Operating Junction Temperature + 200
o
C
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Gpe
Rl
ηηηη
c
VSWR
1
IMD
Common Emitter Power
Gain
Return Loss
Collector Efficiency
Load Mismatch Tolerance
Intermodulation Distortion
F =2000 MHz
Vce = 26 Volts
Icq = 300 mAmps
60 Watts PEP
As above, except F2=2000.1
MHz
9.035 9.5
40
-10
3:1
-30
dB
dB
%
dBc
BVceo
BVces
BVcbo
BVebo
Ices
h
FE
θθθθ
jc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Reverse Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Thermal Resistance
Ic = 50 mA, Ib = 0 mA
Ic = 50 mA, Vbe = 0
Ic = 50 mA, Ie = 0 mA
Ib = 10 mA, Ic = 0 mA
Vce = 30 Vdc, Vbe = 0 Vdc
Vce = 5 V, Ic = 1.0 A
Tc = 25
o
C
25
60
60
3.0
20
10
100
.87
Volts
Volts
Volts
Volts
mA
o
C/W
Issue A, January 2000
GHz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE
PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE
CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz20060
60 Watts PEP, 26 Volts, Class AB
1800 - 2000 MHz
Performance versus Input Power
0
20
40
60
013468
Input Power (Watts, average)
Pout (Watts, ave),
Efficiency (%)
7.5
8.5
9.5
10.5
Gain (dB
)
Vcc = 26 V
Icq = 300 mA
f = 1960 MHz
NADC source
Gain
Efficiency
Pout
Adjacent Channel Power Ratio
-70
-60
-50
-40
-30
-20
-90 -60 -30 30 60 90
Frequency (MHz)
ACP (dBc)
1930 1960 19 90
Pout=37 Watt ave,
NADC source
Vcc = 26 Volts
Icq = 300 mA
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