GHZ FM150 Datasheet

FM 150

150 Watts, 28 Volts

Broadcast 88 - 108 MHz

GENERAL DESCRIPTION

The FM 150 is a high power COMMON EMITTER bipolar transistor. It is
designed for FM systems in the frequency band 88-108 MHz. The device has
gold thin-film metallization and diffused ballasting for proven highest MTTF.
Surface passivation eliminates co ntamination and extends life. Low thermal
resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 165 Watts

Maximum Voltage and Current

BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 16 Amps

Ma xi mum Te mperatures

Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 150 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST

Pout
Pin
Pg

η

c

VSWR

Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance

o

o
o

O

CONDITIONS

F = 88-108 MHz
Vcc = 28 Volts

F = 108 MHz

CASE OUTLINE

55HT, STYLE 2

MIN TYP MAX UNITS

150

19

9.0 10
65

3:1

Watts
Watts

dB

%

BVebo
BVceo
BVcbo
Cob
h

FE

1

jc

θ

Note 1: Tc= + 25 C unless otherwise specified

Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance

o

Ie = 20 mA
Ic = 100 mA
Ic = 100Ma
Vcb = 28V
Ic = 1A, Vce=5V

4.0

25
60

20

140

1.06

Volts
Volts

pF

o

C/W

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

FM 150

August 1996