GHZ DME500 Datasheet

DME 500

500 Watts, 50 Volts, Pulsed

Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION

The DME 500 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 1700 Watts

Maximum Voltage and Current

BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 40 Amps

Ma ximum Temperatures

Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

o2

o
o

O

CASE OUTLINE

55KT, STYLE 1

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg

η

c

VSWR

Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance

F = 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz

500

6.0 6.5
35

125

10:1

Watts
Watts

dB

%

BVebo
BVces
h

FE

2

jc

θ

Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance

Ie = 30 mA
Ic = 40 mA
Ic = 500 mA, Vce = 5 V

3.5

55
10 100

0.1

Volts
Volts

o

C/W

Note 1: At rated output power and pulse conditions
2: At rated pulse conditions

Initial Issue June, 1994

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

DME 500