GHZ DME375A Datasheet
DME375A
375 Watts, 50 Volts, Pulsed
Avionics 1025-1150 MHz
R.A.063099
GENERAL DESCRIPTION
The DME375A is a high power COMMON BASE bipolar transistor. It is
CASE OUTLINE
55AW Style 1
designed for pulsed systems in the frequency band 1025-1150 MHz. The device
has gold thin-film metallization for proven highest MTTF. The transistor
includes input and output prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25!C
Maximum Voltage and Current
Collector to Base Voltage (BV
Emitter to Base Voltage (BV
Collector Current (I
Maxi mum Temp e r a t u r e s
Storage Temperature -65 to +200!C
Operating J unction Temperature +200!C
ELECTRICAL CHARACTERISTICS @ 25
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
P
in
P
g
"
c
VSWR
Power Out F = 1025 – 1150 MHz 375 W
Power Input 85 W
Power Gain 6.5 dB
Collector Efficiency
1
Load Mismatch Tolerance F = 1090 MHz
2
875 W
)55V
ces
)4.0 V
)30A
c
ebo
!!!!
C
Vcc = 50 Volts
PW = 10 #sec
DF = 1%
40 %
!
:1
FUNCTIONAL CHARACTERISTICS @ 25
BV
ebo
BV
ces
h
FE
2
$
jc
NOTE 1: At rated output power and pulse conditions
2. At rated pulse conditions
.
Initial Issue June 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHE R NOT I CE . GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRI BE D HE REI N ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
Emitter to Base Breakdown Ie = 20 mA 4.0 V
Collector to Emitter Breakdown Ic = 25 mA 55 V
DC – Current Gain Vce = 5V, Ic = 300 mA 10
Thermal Resistance 0.2
!!!!
C
!
C/W
DME 375A
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