GHZ DME150 Datasheet
DME 150
150 Watts, 50 Volts, Pulsed
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The DME 150 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and ouput prematch for
broadband capabilit. Low thermal resistance package reduces junction
temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 290 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 15 Amps
Ma ximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 150 C
ELECTRICAL CHARACTERISTICS @ 25 C
o2
o
o
O
CASE OUTLINE
55AY, STYLE 1
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
150
7.8 8.3
40
25
20:1
Watts
Watts
dB
%
BVebo
BVces
Cob
h
FE
2
jc
θ
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 15 mA
Ic = 25 mA
Vcb = 50 Volts
Ic = 250 mA, Vce = 5 V
4.0
55
20
0.6
Volts
Volts
pF
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June 1, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
DME150
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