GHZ 3003 Datasheet
3003
3 Watts - 28 Volts, Class C
Microwave 3000 MHz
GENERAL DESCRIPTION
The 3003 is a COMMON BASE transistor capable of providing 3 Watts Class
C, RF output power at 3000 MHz. Gold metalization and diffused ballasting
are used to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 10 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 0.6 A
Ma xi mum Te mperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o
o
o
O
CASE OUTLINE
55BT-1, STYLE 1
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
1
Load Mismatch Tolerance
F = 3.0 GHz
Vcb = 28 Volts
Po = 3 Watts
As Above
F = 3 GHz, Po = 3 W
3.0
6.0
30
0.75
30:1
Watt
Watt
dB
%
BVces
BVebo
Icbo
h
FE
Cob
θjc
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 30 mA
Ie = 3 mA
Vcb = 28 Volts
Vce = 5 V, Ic = 300 mA
F =1.0 MHz, Vcb = 28 V
50
3.5
1.5
10
7.0
17
Volts
Volts
A
m
pF
o
C/W
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
3003
August 1996
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