GHZ 2425-25 Datasheet

R.A.P.992605-BEHRE

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fa x 408 / 986-8120

2425-25

25 WATT, 24V, Class C

Microwave 2410-2470 MHz

GENERAL DESCRIPTION

The

2425-25

is a common base bipolar transistor capable of providing 25 Watts
of Class C RF output power over the band of 2410-2470 MHz. This transistor is
specifically designed for microwave broadband Class C amplifier applications.
It includes input and output matching and uses gold metallization and diffused
ballasting to provide high reliability and supre me ruggedness.

CASE OUTLINE

55AP

Common Base

Narrow Lead

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation @25°C (P

d

) 75 W

Thermal Resistance (

θ

JC

)2.5

°

C/W

Voltage and Current

Collector-Emitter Voltage 48V
Emitter-Base Voltage 3.5V
Collector Current 3A

Temperatures

Storage Temperature -65 to +200°C
Operating J unction Temperature +200°C

ELECTRICAL CHARACTERISTICS @ 25

°°°°

C

SYMBOL CHARACTERISTICS TEST

CONDITIONS

MIN TYP MAX UNITS

BVebo

Emitter-Base Breakdown(op en) Ie=25mA

3.5 V

BVces

Collector-Emitter Breakdown(shorted) Ic=160mA

48 V

h

FE

DC Current Gain Ic=160mA, Vce=5V

10 100

β

FUNCTIONAL CHARACTERISTICS @ 25

°°°°

C

G

PB

Common Base Pow er Gain Vcc = 24V, F = 2410-2470 MHz, P

out

=25W

7.5 8 dB

η

c

Collector Efficiency Vcc = 24V, F = 2410-2470 MHz, P

out

=25W

47 49 %

VSWR

Output Load Mismatch Vcc = 24V, F = 2410-2470 MHz, P

out

=25W

3:1

Ψ

Zin(1)

Series Source Impedance Vcc=24V,F=2410,2440,2470 MHz,P

out

=25W 8.6-

j19.7

8.4­j19.1

8.2­j18.5

Ω

Z

out

(2)

Series Load Impedance Vcc=24V,F=2410,2440,2470 MHz,P

out

=25W 6.1-

j5.7

6.1­j5.5

6.1­j5.2

Ω

(1) Circuit source impedance (@ the device input) at which the device operates.
(2) Optimum load impedance into which the device output operates.

Initial Issue April 1999