GHZ 23A003 Datasheet

23A003

0.3 Watts, 15 Volts, Class A
Linear to 2300 MHz

GENERAL DESCRIPTION CASE OUTLINE

The23A 003 is a COM M ON EMITTER transistor c apable of providing 0.3
Wat ts of Class A, RF output power to 2300 MHz. This transisto r is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.

55BT, STYLE 2

B08

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 3.0 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Coll ecto r Current 0.3 Amps

Maximum Temperatures

Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg
Ft
VSWR

BVebo
BVces
BVceo
h

FE

Cob

θ

jc

Powe r Out F = 2.3 GHz 0.3 Watts
Powe r Input Ic = 100 mA 0.03 Watts
Powe r Gain Vcc = 15 Vo lts 10.0 11.0 dB
Trans ition Frequency Vce = 15V, Ic =100 mA 4.2 4.5 GHz
Load Mi smatch Tolerance 10:1

Emitter to Base Breakdown Ie = 2 mA 3.5 Volts
Collector to Emitter Breakdown Ic = 20 mA 50 Volts
Collector to Emitter Breakdown Ic = 20 mA 20 Volts
DC Current Ga in Vce = 5 V, Ic = 100 mA 20
Capac itance Vcb = 20V, f = 1 MHz 2.5 pF

Thermal Resistance 45

o

o
o

O

o

C/W

Initial Issue November 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOM M E NDS THAT BEFORE
TH E PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakm ead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120