GHZ 2324-20 Datasheet

2324-20

20 Watts, 24 Volts, Class C

Microwave 2300-2400 MHz

GENERAL DESCRIPTION

The 2324-20 is a COMMON BASE transistor capable of providing 20 Watts
of Class C, RF output power over the band 2300-2400 MHz. This transistor is
specifically designed for Microwave Broadb and Class C amplifier
applications. It includes input and output pre matching and utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. This transistor uses a fully hermetic High Temperature Solder
Sealed package.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 58 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 40 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 3.0 Amps

Ma xi mum Te mperatures

Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST

o

o
o

O

CONDITIONS

CASE OUTLINE

55AW, STYLE 1

MIN TYP MAX UNITS

Pout
Pin
Pg

η

c

VSWR

BVebo
BVces
Hfe
Cob

θ

jc

* Not measurable due to internal prematch network

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance

Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance*
Thermal Resistance

F = 2.3 - 2.4 GHz
Vcc = 24 Volts

Ie = 25 mA
I = 160 mA
Vce = 5 V, Ic =160mA

20

7.0

3.5
40
10

40

Watts

4.0

10:1

100

3.0

Watts

dB

%

Volts
Volts

pF

o

C/W

2324-20

August 1996