GHZ 2324-12L Datasheet

2324-12L

12 Watts - 20 Volts, Class C

Microwave 2300 - 2400 MHz

GENERAL DESCRIPTION

The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts
of Class C, RF output power over the band 2300-2400 MHz. This transistor is
specifically designed for Microwave Broadb and Class C amplifier
applications. It includes input and output pre matching and utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transisto r uses a fully hermetic High Temperature Solder
Sealed package.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 44 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 40 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 3.0 Amps

Ma xi mum Te mperatures

Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

o

o
o

O

CASE OUTLINE
55AW, STYLE 1

Pout
Pin
Pg

η

c

VSWR

BVebo
BVces
H

fe

Cob

θ

jc

*Not measureable due to internal prematch network

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance

Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance*
Thermal Resistance

F = 2.3 - 2.4 GHz
Vcc = 20 Volts
Po = 12 Watts
As Above
F=2.3 GHz, Pin =2.5W

Ie= 10 mA
Ic = 50mA
Vce=5V, Ic=1A
F=1 MHz, Vcb=24V

12

6.8

3.5
45
10

40

Watts

2.5

10:1

4.0

Watts

dB

%

Volts
Volts

o

C/W