GHZ 2010 Datasheet

2010

10 Watt - 28 Volts, Class C

Microwave 2000 MHz

GENERAL DESCRIPTION

The 2010 is a COMMON BASE transistor capable of providing 10 Watts
Class C, RF output power at 2000 MHz. Gold metalization and diffused
ballasting are used to provide high reliability and supreme ruggedness. The
transistor uses a full y hermetic High Temperature Solder Sealed package.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 30 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 2.0 A

Ma ximum Temperatures

Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

o

o
o

O

CASE OUTLINE

55BT-1

, Style

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg

η

c

VSWR

Power Out
Power Input
Power Gain
Collector Efficiency

1

Load Mismatch Tolerance

F = 2 GHz
Vcb = 28 Volts
Po= 10 Watts
As Above
F = 2 GHz, Po = 10 W

10

7.0

8.0
40

2

20:1

Watt
Watt

dB

%

BVces
BVcbo
BVebo
Icbo
h

FE

Cob

θjc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance

Ic = 20 mA
Ic = 4 mA
Ie = 4 mA
Vcb = 28 Volts

Vce = 5 V, Ic = 400 mA
F = 1 MHz, Vcb = 28 V

50
45

3.5

20

4.0

6.0

Volts
Volts
Volts

mA

pF

o

C/W

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

2010

August 1996