GHZ 1920CD35 Datasheet
R.A.P.992304-CHIU
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOT I CE . GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HE REIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986 - 8120
1920CD35
35 Watts, 25 Volts, Class AB
Personal 1930 – 1990 MHz
GENERAL DESCRIPTION
The
1920CD35
is a
COMMON EMITTER
transistor capable of providing 35
Watts of Class AB, RF output power over the band 1930-1990 MHz. This
transistor is specifically designed for
PERSONAL COMMUNICATIONS
BASE STATION
amplifier applications. It includes Input prematching and
utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide
high reliability and supreme ruggedness.
CASE OUTLINE
55AR Style 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
°°°°
C 120 Watts
Maximum Voltage and Current
Collector to Emitter Voltage (BV
CES
) 55 V
Collector to Emitter Voltage (LC
CEO
) 27 V
Collector to Emitter Voltage (BV
CER
) 50 V
Emitter to Base Voltage (BV
EBO
) 3.5 V
Collector Current (I
c
) 14.0 Amps
Maxi mu m T emperature s
Storage Temperature -65 to +200°C
Operating Junction Temperature +230°C
ELECTRICAL CHARACTERISTICS @ 25
°°°°
C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Out F = 1990 MHz 35 W
P
in
Power Input VCC = 25 Volts 6.0 W
P
g
Power Gain Icq = 250 mAmps 8.0 8.5 dB
η
c
Collector Efficiency As above 43 %
VSWR
1
Load Mismatch Tolerance 3:1
FUNCTIONAL CHARACTERISTICS @ 25
°°°°
C
BV
CES
Collector to Emitter Breakdown Ie = 50 mA 5 5 V
LV
CEO
Collector to Emitter Breakdown Ic = 50 mA 2 5 V
BV
CER
Collector to Emitter Breakdown Ic = 50mA, Re = 10 Ohms 50 V
BV
EBO
Emitter to Base Breakdown Ie = 10mA 3.5 V
I
CES
Collector Leakage Current Vce = 27 V 10 mA
h
FE
DC – Current Gain Vce = 5V, Ic = 1A, 20 100
C
OB
Output Capacitance F = 1 MHz, Vcb = 28V 28 PF
θ
jc
2
Thermal Resistance Tc = 25oC1.6
°
C/W
Initial Issue April 1999
1920CD35
Zin ZCL
Frequency
R jx R jx
1900 4.19 5.14 4.7 -8.28
1930 4.22 4.99 4.56 -8.24
1960 4.17 4.62 4.05 -7.69
1990 3.06 4.23 4.39 -7.38
2000 2.74 4.83 4.42 -7.34
INPUT IMPEDANCE
1.00
2.00
3.00
4.00
5.00
6.00
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
FREQUENCY (MHZ)
OHMS
RIN
xIN
Vcc=25 V Icq=250 mA Pout=35 W CW
Collector Efficiency vs Power out CDMA
0
5
10
15
20
25
30
35
20 22 24 26 28 30 32 34 36 38 40 42
Power Out (dBm) CDMA ave
Efficiency %
Eff CDMA
F=1990 mHz Vcc=25