GHZ 1920AB12 Datasheet
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1920AB12
12 Watts, 25 Volts, Class AB
Personal 1930 - 1990 MHz
GENERAL DESCRIPTION
The 1920AB12 is a COMMON EMITTER transistor capable of providing 12
Watts of Class AB, RF output power over the band 1930-1990 MHz. This
transistor is specifically designed for
PERSONAL COMMUNICATIONS
BASE STATION
amplifier applications. It includes Input prematching and
utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide
high reliability and supreme ruggedness. .
CASE OUTLINE
55CT, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 46 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 55 Volts
Lvceo Collector to Emitter Voltage 27 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 3.5 Amps
Maxi mum Te mperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F =1990 MHz
Vce = 25 Volts
Icq = 130 mAmps
As Above
12
7.5 8.0
43
2.2
3:1
Watt
Watt
dB
%
BVces
LVceo
BVebo
Ices
h
FE
Cob
θjc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 27 Volts
Vce = 5 V, Ic = 0.5 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
o
55
27
3.5
20
12
3
100
3.8
Volts
Volts
Volts
mA
pF
C/W
o
Issue February 1996
Typical Performance
1920AB12
August 1996
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