GHZ 1920A20 Datasheet

R.B.063099

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOT I CE . GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HE REIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986 - 8120

1920A20

20 Watts, 25 Volts, Class A

10 dB Gain

Personal 1930 – 1990 MHz

GENERAL DESCRIPTION

The 1920A20 is a COMMON EMITTER transistor capable of providing 20
watts of Class A, RF output power over the band 1930-1990 MHz. This
transistor is specifically designed for

PERSONAL COMMUNICATIONS

BASE STATION LINEAR

amplifier applications. It includes input
prematching and utilizes Gold metalization and HIGH VALUE EMITTER
ballasting to provide high reliability and supre me ruggedness.

CASE OUTLINE

55SW Style 2

COMMON EMITTER

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

°°°°

C 190 Watts

Maximum Voltage and Current

Collector to Emitter Voltage (BV

CES

) 55 V

Collector to Emitter Voltage (LV

CEO

) 27 V

Emitter to Base Voltage (BV

EBO

) 3.5 V

Collector Current (I

c

) 14.0 Amps

Maxi mu m T emperature s

Storage Temperature -65 to +150°C
Operating Junction Temperature +200°C

ELECTRICAL CHARACTERISTICS @ 25

°°°°

C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

P

out

Power Out F = 1930 - 1990 MHz 20 W

P

in

Power Input VCE = 25 Volts 2.2 W

P

g

Power Gain Icq = 3.0 Amps 9.5 10 dB

IMD3 Intermodulation Distortion Pave= +37 dBm -38 dBc

η

c

Collector Efficiency At P1dB 30 %

VSWR

1

Load Mismatch Tolerance 3:1

FUNCTIONAL CHARACTERISTICS @ 25

°°°°

C

BV

CES

Collector to Emitter Breakdown Ie = 50 mA 5 5 V

LV

CEO

Collector to Emitter Breakdown Ic = 50 mA 2 5 V

BV

EBO

Emitter to Base Breakdown Ie = 20mA 3.5 V

I

CES

Collector Leakage Current Vce = 27 V 20 mA

h

FE

DC – Current Gain Vce = 5V, Ic = 1A, 30 100

θ

jc

Thermal Resistance Tc = 25

o

C0.92

°

C/W

Initial Issue November 1998

Typical Performance 1920A20

POWER GAIN VS POWER OUTPUT

Vce=25V, Icq=3.0A @ 1990MHz

0

2

4

6

8

10

12

2.5 5 7.5 10 12.5 15 17.5 20

POWER OUTPUT -Watts

POWER GAIN - dB

Gain (dB)

POWER OUTPUT VS POWER INPUT

Vce=25V, Icq=3.0A @ 1990MHz

0

2.5

5

7.5

10

12.5

15

17.5

20

22.5

0.2 0.4 0.6 0.82 1.02 1.25 1.47 1.73

POWER INPUT - Watts

POWER OUTPUT-

Watts

Pout

SERIES INPUT IMPEDANCE

Vce=25V, Icq=3.0A, Pout= 20 W

1.4

1.6

1.8

2

2.2

2.4

1930 1940 1950 1960 1970 1980 1990

FREQUENCY (MHz)

Rin (OHMS)

-2.5

-2

-1.5

-1

-0.5

0

Xin (OHMS)

Rin
Xin

COLLECTOR LOAD IMPEDANCE

Vce=25V, Icq=3.0A, Pout= 20 W

3

3.25

3.5

3.75

4

4.25

4.5

1930 1940 1950 1960 1970 1980 1990

FREQUENCY (MHz)

Rcl (OHMS)

0

0.5

1

1.5

2

Xcl (OHMS)

Rcl
Xcl

BROAD BAND POWER GAIN & RETURN LOSS

Pout= 20 W, Vce = 25V, Icq=3.0A

0

2

4

6

8

10

12

1930 1940 1950 1960 1970 1980 1990

FREQUENCY (MHz)

POWER GAIN

(dB)

-25

-20

-15

-10

-5

0

RETURN LOSS

(dB)

Gain (dB)
Rl(-dB)

ITERMOD DIST vs COLLECTOR CURRENT

Po=37 dBm, Vce=25 @ 1990MHz

-70

-60

-50

-40

-30

-20

-10

0

2 2.2 2.4 2.6 2.8 3

COLLECTOR CURRENT- Amps

INTERMOD DIST- dBc

3rd order
5th order