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Preliminary Issue
1719-35
35 Watt - 28 Volts, Class C
Microwave 1725 - 1850 MHz
GENERAL DESCRIPTION
The 1719-35 is a COMMON BASE transistor capable of providing 35 Watts
of Class C, RF output power over the band 1725 -1850 MHz. This transistor is
designed for Microwave Broadband Class C, HIGH EFFICIENCY amplifier
applications. It includes Input and Output prematching and utilizes Gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transistor uses a Low Inductance Flange Mount, Ceramic
sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 97 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 12 A
Ma ximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o
o
o
O
CASE OUTLINE
55AR, STYLE 1
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
1
BVces
BVebo
H
FE
Cob
θjc
72045
Initial Issue April 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
F = 1725 -1850 MHz
Vcb = 28 Volts
Pin = 6.23 Watts
As Above
F = 1850MHz, Pin = 6.23W
Ic = 20 mA
Ie = 15 mA
Vce = 5 V, Ic = 1 A
F = 1 MHz, Vcb = 28V
35
6.23
7.5
45
50
3.5
10 100
8.0
50
4.5:1
1.8
Watt
Watt
dB
%
Volts
Volts
pF
o
C/W
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120