GHZ 1617AB15 Datasheet

1617AB15

15 Watts PEP, 26 Volts, Class AB

Linear 1600 - 1700 MHz

GENERAL DESCRIPTION

The 1617AB15 is a COMMON EMITTER transistor capable of providing
15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz.
This transistor is specifically designed for
amplifier applications. It includes Input prematching and utilizes Gold
metalization and HIGH VALUE EMITTER ballasting to provide high
reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 58 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 60 Volts
LVceo Collector to Emitter Voltage 27 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 6.0 Amps

Ma ximum Temperatures

Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SATCOM BASE STATION

o

o
o

O

CASE OUTLINE

55CW

COMMON EMITTER

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P-1dB

Pg
IMD

3

VSWR

BVces
LVceo
BVebo
Ices
h

FE

Cob

θjc

Issue February 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

Power Out 1 dB comp pt.
Power Gain
Intermod. distortion -3rd
Load Mismatch Tolerance

Collector to Emitter Breakdown
Collector to EmitterBreakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance

F =1700 MHz
Icq = 100 mAmpsVcc= 26V
15 W PEP, Two Tone

Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 26 Volt s

Vce = 5 V, Ic =0.5 A
F =1 MHz, Vcb = 28 V

o

Tc = 25 C

15

10.0 12

60
27

3.5

20

20

-32
6:1

10

100

3.0

Watt

dB

dBc

Volts
Volts
Volts

mA

pF

o

C/W

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120