GHZ 1314AB60 Datasheet
R.1.A.052699-PHAN
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOT I CE . GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HE REIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
1314AB60
60 Watts PEP, 25 Volts, Class AB
Linear 1350 – 1400 MHz
ADVANCED RELEASE
GENERAL DESCRIPTION
The 1314AB60 is a COMMON EMITTER transistor capable of providing 60
Watts of Class AB, RF output power over the band 1350-1400 MHz. This
transistor is specifically designed for
LINEAR POWER
amplifier applications.
It includes Input prematching and utilizes Gold metalizatio n and HIGH V ALUE
EMITTER ballalsting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55MY Style 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
°°°°
C 200 Watts
Maximum Voltage and Current
Collector to Emitter Voltage (BV
CES
) 55 V
Collector to Emitter Voltage (BV
CEO
) 27 V
Emitter to Base Voltage (BV
EBO
) 3.5 V
Collector Current (I
c
) 20.0 Amps
Maxi mu m T emperature s
Storage Temperature -65 to +150°C
Operating Junction Temperature +200°C
ELECTRICAL CHARACTERISTICS @ 25
°°°°
C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Out F = 1350 – 1400 MHz 60 W
P
in
Power Input VCC = 25 Volts 12 W
P
g
Power Gain Icq = 250 mAmps 7.0 8.0 dB
Rl Return Loss As above -10 DB
η
c
Collector Efficiency 45 50 %
VSWR Load Mismatch Tolerance 60 Watt PEP 2:1
FUNCTIONAL CHARACTERISTICS @ 25
°°°°
C
BV
CES
Collector to Emitter Breakdown Ie = 100 mA 55 V
BV
CEO
Collector to Emitter Breakdown Ic = 100 mA 27 V
BV
EBO
Emitter to Base Breakdown Ie = 25mA 3.5 V
I
CES
Collector Leakage Current Vce = 27 V 30 mA
h
FE
DC – Current Gain Vce = 5V, Ic = 1.5A 20 100
θ
jc
2
Thermal Resistance Tc = 25oC.87
°
C/W
Initial Issue May 1999
1314AB60
Zin ZCL
Frequency
R jx R jx
1250 6.08 4.37 3.38 6.19
1300 6.07 3.7 3.29 5.75
1350 6.09 3.04 3.21 5.34
1400 6.16 2.39 3.15 4.94
1450 6.26 1.76 3.11 4.56
SERIES INPUT IMPEDANCE V.s FREQUENCY
VCE=25V Pout=60 W, Icq=250mA.
4
5
6
7
8
9
10
11
12
1250 1300 1350 1400 1450
FREQUENCY(MHz)
REAL(Ohm)
-5
-4
-3
-2
-1
0
1
2
3
4
5
IMAGINARY
R
jx
SERIES COLLECTOR LOAD IMPEDANCE V.s FREQUENCY
VCE=25V Pout=60 W, Icq=250 mA.
0
1
2
3
4
5
6
7
1250 1300 1350 1400 1450
FREQUENCY(MHz)
REAL(Ohm)
0
1
2
3
4
5
6
7
IMAGINARY
R
jx
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