GHZ 1214-55 Datasheet

1214 - 55

55 Watts - 28 Volts, Pulsed

Radar 1200 - 1400 MHz

GENERAL DESCRIPTION

The 1214-55 is an internally matched, COMMON BASE transistor capable
of providing 55 Watts of pulsed RF output power at two milliseconds pulse
width, twenty percent duty factor across the band 1200 to 1400 MHz. This
hermetically solder-sealed transisto r i s specifically designed for L-Band radar
applications. It utilizes gold metalization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 175 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 8 Amps

Ma ximum Temperatures

Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg

η

c

VSWR

Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance

o

o
o

O

F = 1200-1400 MHz
Vcc = 28 Volts
Pulse Width = 2 ms
Duty = 20 %
F=1300MHz, Po=55W

CASE OUTLINE

55AW, STYLE 1

55

12.3

6.5 7.0
45

3:1

Watts
Watts

d B

%

BVces
BVebo
Hfe

θ

jc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Collector to Emitter Breakdown
Emitter to Base Breakdown
DC Current Gain
Thermal Resistance

Ic =100 mA
Ie = 15 mA
Vce = 5 V,Ic = 1000 mA
Rated Pulse Condition

50

3.5

20 45

1.0

Volts
Volts

o

C/W

1214-55

Typical Impedances

August 1996