1214 - 300
300 Watts - 50 Volts, 100µs, 10%
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-300 is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at one hundred
microseconds pulse width, ten percent duty factor across the band 1200 to
1400 MHz. This hermetically solder-sealed transistor is specifically designed
for L-Band radar applications. It utilizes gold metalization and diffused
emitter ballasting to provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 1458 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 17 Amps
Ma ximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o
o
o
O
CASE OUTLINE
55KT, STYLE 1
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out ( Note 2)
Power Input
Power Gain
Collector Efficiency
1
Load Mismatch Tolerance
F = 1200-1400 MHz
Vcc = 50 Volts
Pulse Width = 100 µs
Duty = 10 %
F = 1400MHz, Po
270
8.0
45
42.7
3:1
Watts
Watts
=270W
dB
%
BVces
BVebo
Hfe
1
θ
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
DC Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 25 mA
Vce = 5 V, Ic = 5 mA
Rated Pulse Condition
65
3.0
10 45
0.25
Volts
Volts
o
C/W
Note 1: Pulse condition of 100µsec, 10%.
Note 2: Product Selected to 300 Watt minimum is available, please contact the factory for details.
Issue December, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120