GHZ 1214-300 Datasheet

1214 - 300
300 Watts - 50 Volts, 100µs, 10%
GENERAL DESCRIPTION
The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 1458 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 17 Amps
Ma ximum Temperatures
Storage Temperature - 65 to + 200 C Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o
o o
O
CASE OUTLINE
55KT, STYLE 1
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout
Pin Pg
η
c
VSWR
Power Out ( Note 2) Power Input Power Gain Collector Efficiency
1
Load Mismatch Tolerance
F = 1200-1400 MHz Vcc = 50 Volts Pulse Width = 100 µs Duty = 10 % F = 1400MHz, Po
270
8.0 45
42.7
3:1
Watts Watts
=270W
dB
%
BVces BVebo Hfe
1
θ
jc
Collector to Emitter Breakdown Emitter to Base Breakdown DC Current Gain Thermal Resistance
Ic = 50 mA Ie = 25 mA Vce = 5 V, Ic = 5 mA Rated Pulse Condition
65
3.0
10 45
0.25
Volts Volts
o
C/W
Note 1: Pulse condition of 100µsec, 10%. Note 2: Product Selected to 300 Watt minimum is available, please contact the factory for details.
Issue December, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1214-300
August 1996
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